logo

IRGB5B120KD Datasheet, International Rectifier

IRGB5B120KD transistor equivalent, insulated gate bipolar transistor.

IRGB5B120KD Avg. rating / M : 1.0 rating-15

datasheet Download

IRGB5B120KD Datasheet

Features and benefits


* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA. www.DataSheet4U.com
* Ultrasoft Dio.

Application

T 0 VCC 80 V Rg DUT 1000V 1K www.DataSheet4U.com Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circ.

Image gallery

IRGB5B120KD Page 1 IRGB5B120KD Page 2 IRGB5B120KD Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts